title = "Computational Lithography and RET"

content = """
Computational lithography refers to the use of mathematical models and 
simulations to optimize the lithography process and extend its 
resolution limits. This is often referred to as Resolution 
Enhancement Technology (RET).

**Optical Proximity Correction (OPC):**
OPC is a key component of computational lithography, using models of 
the lithography process to modify the photomask design and 
compensate for diffraction-induced distortions.

**Source-Mask Optimization (SMO):**
SMO is an advanced technique that simultaneously optimizes both the 
light source's illumination pattern (e.g., dipole, quadrupole) and 
the photomask design to maximize the process window for a specific 
circuit pattern.

**Inverse Lithography Technology (ILT):**
ILT is a more radical approach where the desired wafer pattern is 
used as an input, and the optimal mask design is calculated using 
inverse mathematical methods. This often results in complex, 
curvilinear mask shapes that are difficult to manufacture but 
provide superior resolution and process latitude.

**Process Simulation:**
Engineers use simulation software to predict how a pattern will 
print under different dose, focus, and illumination conditions. 
This allows them to optimize the process and identify potential 
problems before any wafers are processed.
"""

version = "0.0.1"
