title = "Future Trends in Lithography (High-NA EUV)"

content = """
The semiconductor industry is constantly pushing the limits 
of lithography to achieve smaller feature sizes and 
higher transistor densities.

**High-NA EUV Lithography:**
High-NA EUV is the next generation of EUV lithography, 
increasing the Numerical Aperture (NA) from 0.33 to 0.55. 
This provides a significant jump in resolution, allowing 
for the production of chips at the 2nm node and beyond. 
High-NA EUV requires a complete redesign of the scanner's 
optics and wafer-handling systems.

**Directed Self-Assembly (DSA):**
DSA is an alternative patterning technique that uses the 
self-organizing properties of block copolymers to form 
high-resolution patterns. This could potentially reduce 
the cost and complexity of lithography for certain 
applications.

**Nanoimprint Lithography (NIL):**
NIL is a mechanical patterning technique where a master 
template is pressed into a resist layer to form the 
pattern. This avoids the resolution limits of optical 
lithography but faces challenges with defectivity and 
overlay.

**E-Beam Direct Write (EBDW):**
EBDW uses an electron beam to directly write the pattern 
onto the wafer, bypassing the need for a photomask. 
This provides extreme resolution but is currently too 
slow for high-volume manufacturing.
"""

version = "0.0.1"
